DocumentCode
1947940
Title
VIPMOS, a Buried Local Injector for EPROMs
Author
Wijburg, R.C.M. ; Hemink, G.J. ; Praamsma, L. ; Middelhoek, J.
Author_Institution
University of Twente, IC-Technology and Electronics department, P.O. box 217 7500 AE Enschede (NL)
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
915
Lastpage
918
Abstract
A highly effective substrate hot electron injection EPROM device can be made using a buried injector, which operates in punch-through mode. The buried injector is formed by a local overlap of the N-well and P-well of a retrograde twin-well CMOS-process. As the VIPMOS-EPROM is compatible with VLSI-processing and the danger of latch-up doesn´t exist, the VIPMOS-structure may be used in VLSI-applications. Due to an efficient electron supply mechanism as well as a high injection probability, programming rates of 1V/¿s can be obtained.
Keywords
Acceleration; Channel hot electron injection; Current density; Current measurement; EPROM; Intrusion detection; Stress; Substrate hot electron injection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5437068
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