Title :
An automated wafermap fast test for bipolar induced breakdown in NMOS transistors
Author :
Gaston, G.J. ; Bold, B.S. ; Mason, J.B.
Author_Institution :
GEC Plessey Semiconductors Ltd., Plymouth, UK
Abstract :
A fast wafermap test for the characterisation of bipolar induced breakdown in NMOS transistors has been developed. The technique utilises the peak of a plot of Iwell/Idrain (at peak substrate current conditions) to provide an efficient, repeatable and easily quantifiable measurement of the breakdown voltage. The technique has been performed successfully for different technologies giving good agreement with existing techniques. The effect of pwell contact placement, leff, Vgs/Vds ratio and temperature has also been investigated
Keywords :
automatic testing; electric breakdown of solids; insulated gate field effect transistors; semiconductor device testing; Iwell/Idrain plot; NMOS transistors; automated wafermap fast test; bipolar induced breakdown; breakdown voltage; peak substrate current conditions; pwell contact placement; Automatic testing; Breakdown voltage; Current measurement; Electric breakdown; Electrons; Hot carriers; MOS devices; MOSFETs; Substrates; Temperature;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303508
