Accurate characterization of MOSFET overlap/fringing capacitance for circuit design

Author

McAndrew, Colin C. ; Zaneski, Gerard ; Layman, Paul A. ; Ayyar, Shekar G.

Author_Institution

AT&T Bell Labs., Allentown, PA, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

15

Lastpage

20

Abstract

In this paper we present a new, accurate method to characterize MOSFET overlap/fringing capacitance C_of. Existing methods determine C_of independent of the intrinsic gate capacitance, and so do not model total gate capacitance C_g-sdb correctly. Our method determines C_of to fit C_g-sdb optimally, which is the proper goal of C_of characterization for circuit design. We also present test structures, measurement techniques, and results of both C-V and s-parameter measurements

Keywords

S-parameters; capacitance; capacitance measurement; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; C-V measurements; MOSFET; S-parameter measurements; fringing capacitance; gate capacitance; measurement techniques; overlap capacitance; test structures; Capacitance measurement; Capacitance-voltage characteristics; Circuit simulation; Circuit synthesis; Educational institutions; Integrated circuit modeling; MOSFET circuits; Measurement techniques; Scattering parameters; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303510

Filename

303510