Title :
Accurate characterization of MOSFET overlap/fringing capacitance for circuit design
Author :
McAndrew, Colin C. ; Zaneski, Gerard ; Layman, Paul A. ; Ayyar, Shekar G.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
In this paper we present a new, accurate method to characterize MOSFET overlap/fringing capacitance Cof. Existing methods determine Cof independent of the intrinsic gate capacitance, and so do not model total gate capacitance Cg-sdb correctly. Our method determines Cof to fit Cg-sdb optimally, which is the proper goal of Cof characterization for circuit design. We also present test structures, measurement techniques, and results of both C-V and s-parameter measurements
Keywords :
S-parameters; capacitance; capacitance measurement; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; C-V measurements; MOSFET; S-parameter measurements; fringing capacitance; gate capacitance; measurement techniques; overlap capacitance; test structures; Capacitance measurement; Capacitance-voltage characteristics; Circuit simulation; Circuit synthesis; Educational institutions; Integrated circuit modeling; MOSFET circuits; Measurement techniques; Scattering parameters; Testing;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303510
