DocumentCode :
1948027
Title :
Selective one-step plasma patterning process for fluidic self-assembly of silicon chips
Author :
Bock, Karlheinz ; Scherbaum, Sabine ; Yacoub-George, Erwin ; Landesberger, Christof
Author_Institution :
Fraunhofer-Inst. for Reliability & Microintegration, Munich
fYear :
2008
fDate :
27-30 May 2008
Firstpage :
1099
Lastpage :
1104
Abstract :
Applying a tetrafluoromethane (CF4) low pressure plasma process to the surface of a polymeric foil with a structured thin film copper layer on top results in an opposed wettability behavior of metal areas and polymer areas. Difference in the local water contact angle between the hydrophobic polymer and the hydrophilic copper after a maskless CF4 plasma treatment is 95deg-105deg. By storing the plasma treated foils under nitrogen their programmed wetting behavior can be preserved for at least ten day. The special wetting properties of surface energy patterned foils favor them as substrate materials in fluidic self assembly processes. Self alignment of small and thin silicon chips on copper bonding sites on polyimide foils was observed. Specific design patterns are proposed that enable both bonding of dies at dedicated target positions and electrical interconnects at front side or rear side of electronic components with two connection pads. Using a droplet of water as assembly medium and an anisotropic conductive adhesive (ACA) coating lead to successfully assembled test chips on patterned polyimide foils that were pre-treated in the selective one-step CF4 plasma.
Keywords :
conductive adhesives; contact angle; copper; elemental semiconductors; fluidics; foils; metallic thin films; microassembling; monolithic integrated circuits; plasma materials processing; polymers; self-assembly; silicon; surface energy; surface treatment; wetting; anisotropic conductive adhesive coating; connection pads; dies bonding; electronic components; fluidic self-assembly; local water contact angle; low pressure plasma; polyimide; polymeric foil; selective one-step plasma patterning; silicon chips; surface energy; test chips; tetrafluoromethane; thin film copper layer; wettability; Assembly; Bonding; Copper; Nitrogen; Plasma materials processing; Plasma properties; Polyimides; Polymer films; Self-assembly; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2008.4550112
Filename :
4550112
Link To Document :
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