Title :
Fast and accurate on-wafer extraction of parasitic resistances in GaAs MESFET´s
Author :
Debie, Peter ; Martens, Luc ; Zutter, Daniel De
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Abstract :
A new and accurate method for extracting parasitic resistance values of GaAs MESFET´s is presented. The technique makes use of only three simple DC measurements. Simulation and measurement results show that this new extraction method is very accurate compared to other currently used methods. As the same test device can be used for full characterisation of the MESFET´s, this method does not require additional test structures. Using our extraction method, excellent agreement between simulated and measured S-parameters for a small-signal equivalent circuit MESFET model was found, so it is very appropriate for device and circuit modelling purposes. The presented extraction method is implemented in HP-ICCAP, a software tool for parameter extraction. In addition, all the measurements are controlled by this software, so a high level of automation is obtained
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; electric resistance measurement; electronic engineering computing; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor device testing; DC measurements; GaAs; GaAs MESFET; HP-ICCAP; S-parameters; on-wafer extraction; parameter extraction tool; parasitic resistances; small-signal equivalent circuit model; Circuit simulation; Circuit testing; Current measurement; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; MESFET circuits; Parameter extraction; Scattering parameters; Software tools;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303512
