A global optimization of bipolar model parameters using simulated diffusion

Author

Kim, Moonho ; Yoon, Deokro ; Cha, Soongjoon ; Jin, Joohyun ; Lim, Soonkwon ; Choi, Kyuhyun

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

1994

fDate

22-25 Mar 1994

Firstpage

1

Lastpage

6

Abstract

In this paper, a novel parameter extraction algorithm based on modified simulated diffusion (SD) is presented. The utility of this program is demonstrated by applying it to the parameter extraction of a 40 V bipolar transistor and a 2 μm polysilicon emitter bipolar transistor. It is the first time that DC and AC bipolar model parameters have been extracted simultaneously via the global optimization methodology using SD. Indeed this tool, supported by an excellent agreement between the measured and simulated data, is a powerful means for the modeling of any devices

Keywords

SPICE; bipolar transistors; digital simulation; optimisation; semiconductor device models; AC parameters; CASPER; DC parameters; bipolar model parameters; bipolar transistor; global optimization; parameter extraction algorithm; polysilicon emitter transistor; simulated diffusion; Bipolar transistors; Circuit simulation; Curve fitting; Data mining; Optimization methods; Parameter extraction; Research and development; SPICE; Simulated annealing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303513

Filename

303513