A substrate-independent wafer transfer technique for surface-micromachined devices

Author

Nguyen, H. ; Patterson, P. ; Toshiyoshi, H. ; Wu, M.C.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

2000

fDate

23-27 Jan 2000

Firstpage

628

Lastpage

632

Abstract

We report on a new wafer transfer technique that can remove and transfer surface-micromachined layers to application-specific substrates. This process, however, is not limited to only MEMS devices and can be applicable to other semiconductor devices. Successful transfer of a 1 cm×1 cm MEMS chip with electrostatically actuated curled cantilever switches to a transparent quartz substrate has been demonstrated. Pull-in voltage for transferred devices is 31 V compared with 23 V for devices on standard silicon substrates

Keywords

cracks; micromachining; micromechanical devices; quartz; substrates; wafer bonding; 1 cm; 31 V; MEMS devices; Si; SiO₂; application-specific substrates; electrostatically actuated curled cantilever switches; epitaxial liftoff; pull-in voltage; surface-micromachined devices; transparent quartz substrate; wafer transfer; Fabrication; Microelectromechanical devices; Micromechanical devices; Optical devices; Semiconductor devices; Silicon; Substrates; Switches; Thermal conductivity; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Conference_Location

Miyazaki

ISSN

1084-6999

Print_ISBN

0-7803-5273-4

Type

conf

DOI

10.1109/MEMSYS.2000.838591

Filename

838591