DocumentCode
1948225
Title
Silicon-on-Diamond Technology
Author
Annamalai, N.K. ; Fechner, Paul ; Sawyer, Jon
Author_Institution
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
64
Lastpage
65
Keywords
Capacitance-voltage characteristics; Conducting materials; Dielectrics and electrical insulation; Integrated circuit technology; MISFETs; MOS capacitors; Silicon on insulator technology; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664796
Filename
664796
Link To Document