DocumentCode

1948241

Title

Impact of plasma-charging damage to the scaling limit of thin gate-oxide

Author

Cheung, Kin P.

Author_Institution

Lucent Technologies, USA

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

40

Lastpage

45

Keywords

Annealing; Current density; Electrons; Plasma density; Plasma devices; Plasma measurements; Stress; Testing; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505447