Electroplated rf MEMS capacitive switches

Author

Park, Jae Y. ; Kim, Geun H. ; Chung, Ki W. ; Bu, Jong U.

Author_Institution

Mater. & Devices Lab., LG Corp. Inst. of Technol., Seoul, South Korea

fYear

2000

fDate

23-27 Jan 2000

Firstpage

639

Lastpage

644

Abstract

RF microswitches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, Strontium Titanate Oxide (SrTiO₃) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 volts. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz, on/off ratio of 600, and on capacitance of 50 pF, respectively. These switches also have high current carry capability due to the use of electroplated Au or Cux

Keywords

copper; dielectric thin films; electroplated coatings; gold; microactuators; microwave switches; semiconductor switches; strontium compounds; 0.08 dB; 10 GHz; 42 dB; 5 GHz; 50 pF; 8 V; Au; Cu; RF microswitches; SrTiO₃; capacitance; dielectric constant; dielectric layer; dry releasing; electroplated Au; electroplated Cu; electroplated MEMS capacitive switches; high switching on/off ratio; low temperature processes; micromechanical capacitive switch; movable plate; transmission line; Capacitance; Fasteners; Geometry; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Strontium; Switches; Temperature; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Conference_Location

Miyazaki

ISSN

1084-6999

Print_ISBN

0-7803-5273-4

Type

conf

DOI

10.1109/MEMSYS.2000.838593

Filename

838593