DocumentCode
1948380
Title
A new high power symmetrical GTO
Author
Ishidoh, Michiharu ; Iida, Takahiko ; Yamamoto, Masanori ; Tokunoh, Futoshi ; Nakagawa, Tsutomu
Author_Institution
Mitsubishi Electr. Corp., Fukuoka, Japan
fYear
1989
fDate
1-5 Oct. 1989
Firstpage
1273
Abstract
A high-power symmetrical GTO (gate-turn-off) thyristor, rated 4.5 kV/3 kA with improved turn-off capability (3 kA with snubber capacitor=6 mu f and average current=1 kA) and frequency performance has been developed. It is based on a 76 mm-diameter silicon wafer and high-voltage, high-frequency GTO technology, including a smaller scale pattern rule and a novel emitter structure. Performance evaluations confirm that this GTO has many excellent features, such as high turn-off performance, high voltage stability, and low switching energy, and is suitable for application in a high-power current-fed inverter.<>
Keywords
invertors; thyristor applications; 3 kA; 4.5 kV; Si wafer; emitter structure; gate-turn-off; high power symmetrical GTO; high-frequency; high-power current-fed inverter; high-voltage; low switching energy; snubber capacitor; stability; thyristor; Cities and towns; Inverters; Motor drives; Paper technology; Power engineering and energy; Shape; Silicon; Snubbers; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/IAS.1989.96808
Filename
96808
Link To Document