Title :
Metal Gates for 0.15 um CMOS and beyond
Author :
Webster, M.N. ; Roes, R.F.M. ; van Brandenburg, A.C.M.C. ; KLOOTWI, J.H. ; Zegers, A.T.A.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Keywords :
Artificial intelligence; CMOS process; Capacitance-voltage characteristics; Conducting materials; Current measurement; Density measurement; Frequency measurement; MOSFETs; Tin; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
