Title :
Development of low temperature bonding using in-based solders
Author :
Choi, Won Kyoung ; Yu, Daquan ; Lee, Chengkuo ; Yan, Liling ; Yu, Aibin ; Yoon, Seung Wook ; Lau, John H. ; Cho, Moon Gi ; Jo, Yoon Hwan ; Lee, Hyuck Mo
Author_Institution :
Inst. of Microelectron., A*STAR, Singapore
Abstract :
In-based solders were chosen for the low temperature bonding at lower than 180degC. Three kinds of bonding types on Au/Cu/Ti/SiO2/Si dies, which were Sn/In and Au/In for Type 1, Au/In and Au/Sn for Type 2, and InSn alloy and InSn alloy for Type 3, were studied expecting that the whole In- solder layer is converted to the mixed intermetallic compound (IMC) phases of In-Cu and In-Au IMCs after bonding below 180degC and annealing at 100~120degC. The IMC in the joints were characterized in terms of the micro structure observations and the compositional analysis with Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDX), the phase identification with X-ray Diffraction (XRD) and the re-melting temperature with Differential Scanning Calorimetry (DSC). The phase equilibriums of the joints were examined by thermodynamic calculations to understand the re-melting behavior. As a result, complete bonding consisted of only high melting temperature IMCs, Cu11ln9, Cu2In, eta-Cu6Sn5, and Auln2, was successfully made at 120degC followed by annealing at 100degC in Type 3, and at 160degC with annealing for lOhrs or at 180degC without annealing for Type 1, which was confirmed by DSC measurements and explained through thermodynamic calculations.
Keywords :
X-ray chemical analysis; X-ray diffraction; annealing; bonding processes; crystal microstructure; differential scanning calorimetry; gold; indium; scanning electron microscopy; solders; tin; Au-Cu-Ti-SiO2-Si; Au-In; Au-Sn; DSC; EDX; SEM; Sn-In; X-ray Diffraction; XRD; annealing; differential scanning calorimetry; energy dispersive X-ray spectroscopy; in-based solders; low temperature bonding; melting temperature; microstructure; mixed intermetallic compound; phase identification; remelting temperature; scanning electron microscopy; temperature 100 degC; temperature 120 degC; temperature 160 degC; temperature 180 degC; time 10 h; Annealing; Bonding; Copper alloys; Gold alloys; Scanning electron microscopy; Silicon alloys; Temperature; Thermodynamics; Tin; Titanium alloys;
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2008.4550142