• DocumentCode
    1948594
  • Title

    Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics

  • Author

    Inani, A. ; Rao, V.R. ; Cheng, B. ; Zeitzoff, P. ; Woo, J.C.S.

  • Author_Institution
    University of California, Los Angeles, CA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    160
  • Lastpage
    163
  • Keywords
    Capacitance; Degradation; Dielectrics and electrical insulation; Electrodes; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Permittivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1948594