Title :
Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics
Author :
Inani, A. ; Rao, V.R. ; Cheng, B. ; Zeitzoff, P. ; Woo, J.C.S.
Author_Institution :
University of California, Los Angeles, CA, USA
Keywords :
Capacitance; Degradation; Dielectrics and electrical insulation; Electrodes; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Permittivity;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
