DocumentCode :
1948692
Title :
Simulation of Interface Coupling and Short-Channel Effects in Fully-Depleted Soi Mosfet´s
Author :
Hassein-Bey, A. ; Cristoloveanu, S.
Author_Institution :
Laboratoire de Physique des Composants & Semiconducteurs, France
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
68
Lastpage :
69
Keywords :
Degradation; Fabrication; Gaussian processes; Hot carriers; MOSFET circuits; Nonlinear equations; Poisson equations; Semiconductor films; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664798
Filename :
664798
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1948692
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