Title :
Free-standing, parylene-sealed copper interconnect for stretchable silicon electronics
Author :
Sosin, S. ; Zoumpoulidis, T. ; Bartek, M. ; Wang, L. ; Dekker, R. ; Jansen, K.M.B. ; Ernst, L.J.
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
In this paper, development and characterization of a freestanding electroplated copper interconnect for applications in flexible and stretchable electronics is presented. The copper layer with typical thickness of 5 mum is plated into a photoresist mould realizing meander and mesh-like patterns. These are subsequently released resulting in a free-standing electrical interconnect that is optionally conformally coated by a ~8 mum thick Parylene N layer. Parylene sealing provides electrical insulation and increases rigidity of the structures. Tensile tests on fabricated samples have shown the elongation capability up to 300% for the mesh design and more than 1000% for the meander design. The Parylene coated samples showed increased rigidity but about 50% reduced elongation. Furthermore, parameterized FEM simulations were performed in order to estimate stress levels for different geometries under tensile stress.
Keywords :
copper; elemental semiconductors; elongation; finite element analysis; integrated circuit interconnections; silicon; Si; electrical insulation; elongation capability; free-standing electroplated copper interconnect; free-standing parylene-sealed copper interconnect; mesh-like patterns; parameterized FEM simulations; photoresist mould; stretchable electronics; stretchable silicon electronics; tensile tests; Conducting materials; Copper; Dielectrics and electrical insulation; Inorganic materials; Integrated circuit interconnections; Resists; Sensor arrays; Silicon; Solid modeling; Tensile stress;
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2008.4550149