• DocumentCode
    1948715
  • Title

    Impact of Random Dopant Placement on CMOS Delay and Power Dissipation

  • Author

    Tang, Xinghai ; Bowman, Keith A. ; Eble, John C. ; De, Vivek K. ; Meindl, James D.

  • Author_Institution
    Georgia Institute of Technology, Atlanta, GA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    184
  • Lastpage
    187
  • Keywords
    Analytical models; Delay effects; Density functional theory; Doping; Fluctuations; MOSFETs; Power dissipation; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1948715