Title :
Fabrication of a three-axis accelerometer integrated with commercial 0.8 μm-CMOS circuits
Author :
Takao, Hidekuni ; Fukumoto, Hirofumi ; Ishida, Makoto
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
Abstract :
In the present study, a fabrication technology of bulk-micromachined three-axis accelerometer integrated with commercial CMOS circuits has been investigated for low cost realization and improvement of device performance. The key technologies in the developed fabrication technology are wafer thickness control, backside polishing with chemical spin etching and anisotropic etching with PVD SiO2 mask. The signal processing circuits were fabricated with a commercial 0.8 μm-CMOS technology, and all the micromachining processes were performed to complete CMOS wafers. Characteristics of the devices and reliability for the repetitive vibration load were evaluated. As a result, basic performance of the accelerometers with this technology was confirmed
Keywords :
CMOS integrated circuits; accelerometers; micromachining; microsensors; 0.8 micron; CMOS integrated circuit; PVD SiO2 mask; anisotropic etching; backside polishing; bulk micromachining; chemical spin etching; fabrication technology; signal processing; three-axis accelerometer; wafer thickness control; Accelerometers; Anisotropic magnetoresistance; Atherosclerosis; CMOS technology; Chemical technology; Costs; Etching; Fabrication; Integrated circuit technology; Thickness control;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838617
