Title :
Advanced Nitrogen Preimplant Gate Oxide Technique for Suppression of RNWE and RSCE for 0.18 um CMOS Technology
Author :
Huang, S.-F. ; Puchner, H. ; Kamath, A. ; Ho, B.
Author_Institution :
LSI Logic Corporation, Santa Clara, CA, USA
Keywords :
Boron; CMOS logic circuits; CMOS technology; Implants; Large scale integration; MOS devices; Nitrogen; Oxidation; Random access memory; Silicon;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
