Title :
Recombination of Oxidation-Induced Silicon Interstitials at Si/siO/sub 2/ Interfaces in Soi Structures
Author :
Boussey-Said, J. ; Guillemot, N. ; Stoemenos, J.
Author_Institution :
Department of Physics, University of Thessaloniki, Greece
Keywords :
Microelectronics; Optical buffering; Optical microscopy; Oxidation; Physics; Radiative recombination; Silicon devices; Silicon on insulator technology; Stacking; Substrates;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664799
