• DocumentCode
    1948942
  • Title

    Fast opening GaAs photoconductive switch controlled pulsed power system

  • Author

    Funk, E.E. ; Lee, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    1993
  • fDate
    7-9 June 1993
  • Firstpage
    194
  • Abstract
    Summary form only given. A GaAs photoconductive opening switch controlled pulsed power system has been demonstrated which produces a 6 kV, 70 kW pulse with a risetime of less than 10 ns and a power gain of 10. The GaAs photoconductive switch is the essential element in the pulsed power system. The GaAs switch exhibits a conductivity that is sustained for more than 100 ns beyond the laser pulse when switched into a high impedance (500 /spl Omega/) load. This sustained conductivity even occurs at charging voltages that are well below the critical "lock-on" voltage. It is believed that the sustained conductivity and fast opening of the switch may be related to carrier injection at the switch contacts.
  • Keywords
    photoconducting switches; 10 ns; 100 ns; 500 ohm; 6 kV; 70 kW; GaAs; carrier injection; fast opening GaAs photoconductive switch; high impedance load; laser pulse; pulsed power system; risetime; semiconductor; switch contacts; Conductivity; Control systems; Gallium arsenide; Impedance; Optical pulses; Photoconductivity; Power system control; Pulse power systems; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
  • Conference_Location
    Vancouver, BC, Canada
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-1360-7
  • Type

    conf

  • DOI
    10.1109/PLASMA.1993.593533
  • Filename
    593533