• DocumentCode
    1949687
  • Title

    Ultra-Shallow extensions for industrial 0.15 um CMOS technology fabricated using Plasma Doping

  • Author

    Lenoble, D. ; Alieu, J. ; Grouillet, A. ; Haond, M. ; Felch, S.B. ; Goeckner, M.J. ; Fang, Z.

  • Author_Institution
    France Telecom CNET, Meylan, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    392
  • Lastpage
    395
  • Keywords
    Annealing; CMOS process; CMOS technology; Degradation; Doping; Ion implantation; MOSFETs; Plasma applications; Plasma immersion ion implantation; Textile industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1949687