Pure CMOS one-time programmable memory using gate-ox anti-fuse

Author

Ito, Hiroshi ; Namekawa, Toshimasa

Author_Institution

SoC Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

2004

fDate

3-6 Oct. 2004

Firstpage

469

Lastpage

472

Abstract

A pure CMOS one-time programmable (PCOP) memory is developed as electrically programmable nonvolatile memory for general purposes. The memory cell consists of a thin-oxide PMOS transistor, a thick-oxide NMOS barrier transistor and a selection transistor. It is programmed with the dielectric breakdown of the thin gate oxide. A high voltage generator is built-in so as to be programmable after packaging.

Keywords

CMOS memory circuits; dielectric thin films; programmable circuits; random-access storage; semiconductor device breakdown; electrically programmable nonvolatile memory; gate-oxide anti-fuses; high voltage generator; post-packaging one-time programmable memory; pure CMOS OTP memory; selection transistor; thick-oxide NMOS barrier transistor; thin gate oxide dielectric breakdown; thin-oxide PMOS transistor; CMOS process; CMOS technology; Dielectric breakdown; Electric breakdown; Electrical resistance measurement; Fuses; MOSFETs; Nonvolatile memory; Redundancy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Print_ISBN

0-7803-8495-4

Type

conf

DOI

10.1109/CICC.2004.1358853

Filename

1358853

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1949763