DocumentCode :
1950247
Title :
Modeling of a solid-state Marx generator with parasitic capacitances for optimization studies
Author :
Canacsinh, H. ; Redondo, L.M. ; Silva, F. Fernando ; Schamiloglu, E.
Author_Institution :
Inst. Super. de Eng. de Lisboa, Lisbon, Portugal
fYear :
2011
fDate :
19-23 June 2011
Firstpage :
1422
Lastpage :
1427
Abstract :
A state-space model of a bipolar solid-state Marx generator topology, including the influence of parasitic capacitances, is presented and discussed as an instrument to analyze the circuit operation. The modeling aims to assist the design engineer to enhance the circuit operating performance in order to reduce the losses and to aid in the selection of the semiconductor current ratings. Simulation results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches and introduce new conditions in the operation of the circuit. These preliminary results show good agreement with experimental ones from a laboratory prototype comprising 4 stages, each assembled with 1200 V IGBTs and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV and 10 μs output pulses.
Keywords :
capacitance; optimisation; power semiconductor switches; pulse generators; pulsed power supplies; IGBT; bipolar solid-state Marx generator topology; circuit operation analysis; diode; laboratory prototype; optimization; parasitic capacitance; semiconductor current rating; solid-state switch; state-space model; Application software; Capacitance; Capacitors; Generators; Insulated gate bipolar transistors; Mathematical model; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference (PPC), 2011 IEEE
Conference_Location :
Chicago, IL
ISSN :
2158-4915
Print_ISBN :
978-1-4577-0629-5
Type :
conf
DOI :
10.1109/PPC.2011.6191627
Filename :
6191627
Link To Document :
بازگشت