Title :
An all-digital universal RF transmitter [CMOS RF modulator and PA]
Author :
Wagh, Poojan ; Midya, Pallab ; Rakers, Pat ; Caldwell, James ; Schooler, Tony
Author_Institution :
Motorola Lab., Schaumburg, IL, USA
Abstract :
This paper presents a CMOS class-D PA with on-chip all-digital RF modulator. The IC is fabricated in a 0.18 μm digital CMOS process with MIM capacitors. The die size is a square 2.5 mm on each side. The active area used for the modulator (excluding the pads and bypass capacitance) is 0.315 mm2. The class D PA shows 75 dB IM, -50 dB feedthrough, and puts out 19.6 dBm at >69% drain efficiency from a 1.8 V supply. The modulator operates in the IQ domain, without the use of bias control nor envelope modulation.
Keywords :
CMOS integrated circuits; modulators; power amplifiers; radio transmitters; radiofrequency amplifiers; radiofrequency integrated circuits; 0.18 micron; 1.8 V; 2.5 mm; 69 percent; CMOS class D PA; MIM capacitors; digital RF IQ-modulator; drain efficiency; universal RF transmitter; Clocks; Digital modulation; Integrated circuit testing; Power harmonic filters; Pulse modulation; Pulse width modulation; Quantization; Radio frequency; Space vector pulse width modulation; Transmitters;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358881
