Title :
A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS
Author :
Komijani, Abbas ; Hajimiri, Ali
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 24 GHz, +14.5 dBm fully-integrated power amplifier with 50 Ω input and output matching is fabricated using 0.18 μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5 dBm with a 3 dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8 V supply. The chip area is 1.26 mm2.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; coplanar transmission lines; coplanar waveguides; impedance matching; 0.18 micron; 100 mA; 2.8 V; 24 GHz; 3.1 GHz; 50 ohm; 7 dB; CMOS transistors; fully-integrated power amplifier; input matching; output matching; shielded-substrate coplanar waveguide transmission line structure; Capacitance; Conductivity; Coplanar waveguides; Dielectric substrates; Differential amplifiers; Impedance; Microstrip; Power amplifiers; Propagation losses; Skin effect;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358884
