Title :
Analysis of the Latch and Breakdown Phenomena in Thin Film Soi Mosfet´s As a Function of Temperature
Author :
Balestra, F. ; Jomaah, J.
Author_Institution :
ENSERG/lNPG, France
Keywords :
Electric breakdown; Helium; Latches; Leakage current; MOSFET circuits; Nitrogen; Semiconductor films; Temperature; Thin film devices; Transistors;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664807
