DocumentCode :
1950585
Title :
Effect of Total Dose Radiation on Device Self Latch-Up
Author :
Brady, F.T. ; Haddad, N.F. ; Wang, L.K.
Author_Institution :
IBM Federal Systems Company, Manassas, VA
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
88
Lastpage :
89
Keywords :
Circuits; Degradation; Feeds; Impact ionization; Near-field radiation pattern; Power supplies; Radiative recombination; Semiconductor films; Substrates; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664808
Filename :
664808
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1950585
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