DocumentCode :
1950637
Title :
Low stress and high thermal conductive underfill for cu/low-k application
Author :
Liang, Qizhen ; Moon, Kyoung-Sik ; Zhang, Yuelan ; Wong, C.P.
Author_Institution :
Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA
fYear :
2008
fDate :
27-30 May 2008
Firstpage :
1958
Lastpage :
1962
Abstract :
SiC particles and epoxy resin were applied to prepare a potential high thermal conductivity underfill material. SiC particles are thermally coated with a nano layer silica by oxidation at high temperature. Then silane was used as the surface treatment of the silica coated SiC particles to improve the interaction between filler and polymer matrix. TEM and TGA measurements were used to characterize the treated SiC particles. Mechanical properties of the epoxy composite with the treated SiC filler were measured by DMA, TMA and die shear adhesion test. This study also focused on optimizing the thermal conductivity of the polymer composites by filler surface pretreatment to increase interfacial bonding and decrease the thermal resistance.
Keywords :
adhesion; copper; filled polymers; high-temperature effects; integrated circuit interconnections; nanostructured materials; oxidation; silicon compounds; thermal analysis; thermal conductivity; thermal resistance; transmission electron microscopy; Cu; DMA; TEM; TGA; copper-low-k interdielectric layer; die shear adhesion test; epoxy resin composite; high temperature effects; interfacial bonding; mechanical properties; nanolayer silica; polymer composites; surface treatment; thermal conductivity underfill material; thermal resistance; Conducting materials; Epoxy resins; Oxidation; Silicon carbide; Silicon compounds; Surface resistance; Surface treatment; Thermal conductivity; Thermal resistance; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2008.4550251
Filename :
4550251
Link To Document :
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