DocumentCode
1950757
Title
SOI devices and circuits
Author
Colinge, J.-P.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
Volume
2
fYear
2000
fDate
2000
Firstpage
407
Abstract
Different types of Silicon-on-Insulator (SOI) devices are described and their respective properties are compared. SOI technology is currently becoming mainstream in the field of low-voltage, low-power electronics, where supply voltages as low as 0.5 volt are used. SOI devices and substrates can be optimized to operate at gigahertz frequencies, which makes them a technology of choice for portable telecommunication systems. Some advanced SOI devices are discussed as well
Keywords
low-power electronics; silicon-on-insulator; 0.5 V; SOI circuits; SOI devices; SOI substrates; low-voltage low-power electronics; portable telecommunication systems; CMOS technology; Circuits; Frequency; MOSFETs; Parasitic capacitance; Random access memory; Semiconductor films; Silicon; Substrates; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.838722
Filename
838722
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