DocumentCode :
1950771
Title :
Reliability of flip chip packages with high thermal conductivity heat spreader attach
Author :
Li, Yuquan ; Johnson, R. Wayne ; Thompson, Patrick ; Hooghan, Tejpal ; Libres, Jeremias
Author_Institution :
ECE Dept., Auburn Univ., Auburn, AL
fYear :
2008
fDate :
27-30 May 2008
Firstpage :
2011
Lastpage :
2017
Abstract :
Copper heat spreaders are often used in flip chip in package construction. While providing high thermal conductivity, Cu has a significantly higher coefficient of thermal expansion than Si. In this work, two heat spreader attachment materials, indium for high power and polymeric adhesive for medium power applications, have been investigated. For In solder based attach, the Cu heat spreader was metallized with Ni/Au. Two thin film metallizations, Ti/Ni/Au and Ti/Au, have been studied for the Si backside. A nearly void free heat spreader attach has been achieved with vacuum soldering. For Ti/Ni/Au backside metallized Si die, there was no significant shear strength change after 1000 hours aging at 120degC and there was no significant shear or pull strength variation after five lead free re flow cycles. The shear and pull failure mode was within the indium layer. For Ti/Au die backside metallization, the initial die pull strength and failure mode were a function of Au thickness. With 3000 A of Au, there is no significant variation for shear and pull strength after 600 hours aging at 120degC or after five lead free solder reflow cycles. Failure was in the indium layer. For both types of die metallization, 24 mm times 24 mm Cu heat spreaders assembled on 22 mm times 22 mm Si die, exhibited no delamination after two lead free solder reflow cycles followed by 500 air to air thermal shock cycles (-40degC to 85degC). At 1000 cycles, slight delamination was found at the edges of the assembly for both die metallurgies. For adhesive based flat heat spreader attachment, a thermally conductive adhesive was used as the thermal interface and a non-thermally conductive adhesive was applied at the substrate corners to provide mechanical reinforcement of the heat spreader. After pre-conditioning then aging at 100degC for 500 hours followed by 500 air-to-air thermal shock cycles (0degC to 100degC), no delamination was observed and there was no significant degradation in pull strength.
Keywords :
conductive adhesives; copper; filled polymers; flip-chip devices; gold; indium; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; nickel; reflow soldering; shear strength; solders; thermal conductivity; thermal management (packaging); titanium; vacuum techniques; Cu; In; Ti-Ni-Au; aging aspects; air to air thermal shock cycles; coefficient of thermal expansion; copper heat spreaders; die backside metallization; die pull strength; flip chip packages reliability; high thermal conductivity heat spreader attach; indium solder; lead free solder reflow cycles; mechanical reinforcement; nonthermally conductive adhesive; polymeric adhesive; pull failure mode; shear mode; shear strength; size 22 mm; size 24 mm; temperature -40 C to 85 C; temperature 120 C; thermal interface; thermally conductive adhesive; thin film metallizations; time 1000 hr; time 600 hr; vacuum soldering; Aging; Copper; Environmentally friendly manufacturing techniques; Flip chip; Gold; Indium; Lead; Metallization; Packaging; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2008.4550260
Filename :
4550260
Link To Document :
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