Current status of FET-type ferroelectric memories

Author

Ishiwara, Hiroshi

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

423

Abstract

In this review, a novel ferroelectric-gate FET array is first introduced, which is fabricated on an SOI (silicon-on-insulator) structure and can be used as an analog memory for synaptic connection in an artificial neural network as well as a single-transistor-cell-type nonvolatile digital memory. Then, recent experimental results on MF(MIS) (metal-ferroelectric-metal-insulator-semiconductor) capacitors and FETs are presented. Particular attention is paid to discussing optimum materials and device structures for obtaining good retention characteristics

Keywords

analogue storage; ferroelectric capacitors; ferroelectric storage; integrated memory circuits; random-access storage; reviews; silicon-on-insulator; FET-type ferroelectric memories; FeRAM; SOI structure; Si; analog memory; artificial neural network; capacitors; ferroelectric-gate FET array; nonvolatile digital memory; optimum device structures; optimum materials; retention characteristics; synaptic connection; Analog memory; FETs; Ferroelectric films; Ferroelectric materials; Inorganic materials; Nonvolatile memory; Polarization; Random access memory; Semiconductor films; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838724

Filename

838724