Title :
Scalability of Ti-salicide Process for sub-0.1um Gate Lengths: Optimization of Arsenic Preamorphization Process
Author :
Sallagoity, P. ; Losavio, A. ; Marangon, T. ; Pipia, F. ; Mastracchio, G.
Author_Institution :
STMicroelectronics, Agrate Brianza, Italy
Keywords :
CMOS technology; Degradation; Implants; MOS devices; Research and development; Scalability; Silicides; Silicon; Tin; Titanium;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
