Title :
0.2 μm nMOSFET using EB exposure for all lithography processes
Author :
Fujiwara, I. ; Sakuraba, H. ; Kataoka, Kotaro ; Tanabe, A. ; Endoh, Tetsuo ; Masuoka, Fujio
Author_Institution :
Res. Center, Telecommun. Adv. Organ., Sendai
Abstract :
nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 μm gate length. A drain current of the MOSFET was 0.52 mA/μm at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 μm gate length at a supply voltage of 3 V
Keywords :
MOS integrated circuits; MOSFET; electron beam lithography; integrated circuit technology; semiconductor technology; 0.2 to 0.23 micron; 0.3 V; 10 nm; 3 V; EB exposure; gate oxide thickness; lithography processes; n-channel MOSFET; nMOS ring oscillator; nMOSFET; saturation characteristics; Delay effects; Energy consumption; Inverters; Lithography; MOS devices; MOSFET circuits; Oxidation; Ring oscillators; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838727
