DocumentCode
1950834
Title
0.2 μm nMOSFET using EB exposure for all lithography processes
Author
Fujiwara, I. ; Sakuraba, H. ; Kataoka, Kotaro ; Tanabe, A. ; Endoh, Tetsuo ; Masuoka, Fujio
Author_Institution
Res. Center, Telecommun. Adv. Organ., Sendai
Volume
2
fYear
2000
fDate
2000
Firstpage
439
Abstract
nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 μm gate length. A drain current of the MOSFET was 0.52 mA/μm at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 μm gate length at a supply voltage of 3 V
Keywords
MOS integrated circuits; MOSFET; electron beam lithography; integrated circuit technology; semiconductor technology; 0.2 to 0.23 micron; 0.3 V; 10 nm; 3 V; EB exposure; gate oxide thickness; lithography processes; n-channel MOSFET; nMOS ring oscillator; nMOSFET; saturation characteristics; Delay effects; Energy consumption; Inverters; Lithography; MOS devices; MOSFET circuits; Oxidation; Ring oscillators; Silicon; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.838727
Filename
838727
Link To Document