DocumentCode
1950896
Title
An 8bit 3GHz Si/SiGe HBT sample-and-hold
Author
Jensen, Jonathan C. ; Larson, Lawrence E.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
fYear
2004
fDate
3-6 Oct. 2004
Firstpage
655
Lastpage
658
Abstract
An 8 bit 3 GHz HBT sample-and-hold amplifier (SHA) is demonstrated in a 0.5 μm, 55 GHz Si/SiGe HBT technology. An analysis of the switched-emitter-follower based sample-and-hold, along with improved circuit design techniques to minimize the high frequency sampling errors is presented. The bandwidth and dynamic range of this circuit, at the required sample rate, is superior to other SHNs in silicon technology. The SHA core consumed 90 mA from an 8 V supply.
Keywords
MMIC amplifiers; bipolar analogue integrated circuits; sample and hold circuits; 0.5 micron; 3 GHz; 55 GHz; 8 V; 90 mA; HBT; Si-SiGe; high frequency sampling error minimization; sample-and-hold amplifier; switched-emitter-follower SHA; Bandwidth; Circuits; Clocks; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Sampling methods; Silicon germanium; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN
0-7803-8495-4
Type
conf
DOI
10.1109/CICC.2004.1358911
Filename
1358911
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