Title :
Ohmic contacts for microwave diodes
Author :
Konakova, R.V. ; Milenin, V.V. ; Voitsikhovskiy, D.I. ; Soloviev, E.A. ; Tagaev, M.B. ; Beketov, G.V. ; Kashin, G.N. ; Boltovets, N.S. ; Goncharuk, N.M. ; Chaika, V.E. ; Krivutsa, V.A.
Author_Institution :
Inst. of Surface Chem., Acad. of Sci., Kiev, Ukraine
Abstract :
Au-TiN-n+-Si and Au-Ti-Pd2Si-n+-Si ohmic contacts were fabricated using thermal and magnetron evaporation onto n+-silicon substrates with various concentrations of free electrons. Diode test structures with such contacts were fabricated using photolithography. The effect of thermal annealing and 60Co γ-irradiation on the I-V curves and stability of both contacts and test structures was investigated. The data obtained were compared to the results of mathematical simulation of both tight contacts and those with a SiO2 interlayer. The calculations and experiments demonstrated that such tight low-resistance contacts with Schottky barrier based on palladium silicides are tolerant to short-term thermal annealing up to 600°C and to γ-irradiation in the 102 to 3×105 Gy total dose range
Keywords :
IMPATT diodes; Schottky barriers; annealing; gamma-ray effects; gold; microwave diodes; ohmic contacts; palladium compounds; silicon; thermal stability; titanium; titanium compounds; vacuum deposition; 102 to 3*105 Gy; 600 C; Au-Ti-Pd2Si-Si; Au-Ti-Pd2Si-n+-Si; Au-TiN-Si; Au-TiN-n+-Si; I-V curves; IMPATT diodes; Schottky barrier; contact stability; gamma-irradiation effect; low-resistance contacts; microwave diodes; n+-silicon substrates; ohmic contacts; photolithography; simulation; thermal annealing; Annealing; Electrons; Lithography; Ohmic contacts; Palladium; Schottky barriers; Schottky diodes; Silicides; Testing; Thermal stability;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838736
