DocumentCode :
1951035
Title :
Rapid Thermal Processing for Improved Polysilicon Soi Nmosfets
Author :
Chand, Ami ; Chandra, Sudhir ; Rustagi, S.C. ; Bhattacharyya, A.B.
Author_Institution :
Indian Institute of Technology
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
92
Lastpage :
93
Keywords :
Doping; Grain boundaries; Hydrogen; Implants; MOSFETs; Passivation; Plasma displays; Plasma temperature; Rapid thermal annealing; Rapid thermal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664810
Filename :
664810
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1951035
بازگشت