Title :
Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealing
Author :
Kurobe, Ken-ichi ; Ishikawa, Yoshinori ; Kagawa, Kazuhiro ; Niwatsukino, Yoshiyuki ; Matusno, Akira ; Shibahara, Kentaro
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Abstract :
Low-resistive ultra-shallow n/sup +//p junctions were formed with Sb by a heat-assisted laser annealing method. A wide process window for laser energy density and heating temperature was obtained. Under that condition, Sb diffusion was small and did not affect junction depth. The obtained sheet resistance was about 540/spl Omega///spl square/ for junction depth of 21 nm.
Keywords :
antimony; diffusion; electric resistance; electrical resistivity; elemental semiconductors; laser beam annealing; p-n junctions; silicon; 21 nm; Sb diffusion; Si:Sb; heat assisted excimer laser annealing; heating temperature; junction depth; laser energy density; low resistive ultrashallow n-p junction; sheet resistance; Absorption; Crystallization; Heating; Optical device fabrication; Optical pulses; Probes; Rapid thermal annealing; Rapid thermal processing; Temperature; Thermal resistance;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225194
