A high performance epitaxial SiGe-base ECL BiCMOS technology

Author

Harame, D.L. ; Crabbe, E.F. ; Cressler, J.D. ; Comfort, J.H. ; Sun, J.Y.-C. ; Stiffler ; Kobeda, E. ; Burghartz, J.N. ; Gilbert, M.M. ; Malinowski, J.C. ; Dally, A.J. ; Ratanaphanyarat, S. ; Saccamango, M.J. ; Rausch, W. ; Cotte, J. ; Chu, C. ; Stork, J.M

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

19

Lastpage

22

Abstract

In this work we present a high speed, self-aligned SiGe epitaxial-base ECL BiCMOS technology in which we achieved a record 18.9 ps ECL gate delay at 7.7 mW, 59 GHz peak f/sub max/, 50 GHz peak f/sub T/, and 0.25 mu m-channel CMOS devices with transconductances of 240 mS/mm for the nFET and 140 mS/mm for the pFET. Key technology features include a dielectric-filled deep and shallow trench isolation, a polysilicon-emitter SiGe-epitaxial-base NPN, a low-thermal-cycle 0.25 mu m-channel CMOS, a self-aligned silicide on extrinsic base and Source/Drain/Gate, a thin Ti/W local interconnect combined with two metal levels of AlCu, a nitride/oxide decoupling capacitor, and polysilicon resistors. This BiCMOS process is the highest level of integration and performance yet achieved in a SiGe-base technology.<>

Keywords

BiCMOS integrated circuits; Ge-Si alloys; emitter-coupled logic; integrated circuit technology; metallisation; semiconductor materials; 0.25 micron; 18.9 ps; 50 GHz; 59 GHz; 7.7 mW; ECL gate delay; SiGe; SiGe-base ECL BiCMOS technology; dielectric-filled trench isolation; local interconnect; nitride/oxide decoupling capacitor; polysilicon resistors; polysilicon-emitter epitaxial-base NPN; self-aligned silicide; self-aligned technology; transconductances; BiCMOS integrated circuits; Emitter coupled logic; Germanium alloys; Integrated circuit fabrication; Metallization; Semiconductor materials; Silicon alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307299

Filename

307299