Title :
Helicon wave plasma doping system
Author :
Sasaki, Y. ; Mizuno, B. ; Akama, S. ; Higaki, R. ; Tsutsui, K. ; Ohomi, S. ; Iwai, H.
Author_Institution :
Ultimate Junction Technol. Inc., Moriguchi, Japan
Abstract :
A new concept of Plasma Doping (PD) equipment is demonstrated. Shallow profiles and low resistance will be required for sub 50 nm MOS transistor. Dose control by changing plasma doping time is shown in this paper.
Keywords :
MOSFET; doping profiles; plasma materials processing; semiconductor doping; 50 nm; MOS transistor; helicon wave plasma doping system; metal oxide semiconductor transistor; plasma doping equipment; plasma doping time; shallow profiles; Annealing; Doping; Electromagnets; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Plasma temperature; Plasma waves;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225195
