• DocumentCode
    1951214
  • Title

    Helicon wave plasma doping system

  • Author

    Sasaki, Y. ; Mizuno, B. ; Akama, S. ; Higaki, R. ; Tsutsui, K. ; Ohomi, S. ; Iwai, H.

  • Author_Institution
    Ultimate Junction Technol. Inc., Moriguchi, Japan
  • fYear
    2002
  • fDate
    2-3 Dec. 2002
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    A new concept of Plasma Doping (PD) equipment is demonstrated. Shallow profiles and low resistance will be required for sub 50 nm MOS transistor. Dose control by changing plasma doping time is shown in this paper.
  • Keywords
    MOSFET; doping profiles; plasma materials processing; semiconductor doping; 50 nm; MOS transistor; helicon wave plasma doping system; metal oxide semiconductor transistor; plasma doping equipment; plasma doping time; shallow profiles; Annealing; Doping; Electromagnets; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Plasma temperature; Plasma waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-028-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2002.1225195
  • Filename
    1225195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951214