Title :
Gas phase doping at room temperature
Author :
Sasaki, Y. ; Mizuno, B. ; Akama, S. ; Higaki, R. ; Tsutsui, K. ; Ohomi, S. ; Iwai, H.
Author_Institution :
Ultimate Junction Technol. Inc.,, Moriguchi, Japan
Abstract :
This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.
Keywords :
boron; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor doping; semiconductor junctions; silicon; 1.5 to 2 nm; 293 to 298 K; Si:B; gas phase doping; room temperature thermal potential; shallow junction formation; Argon; Boron; Doping; Electromagnetic measurements; Electromagnets; Gas lasers; Plasma density; Plasma measurements; Plasma sources; Plasma temperature;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225196
