• DocumentCode
    1951229
  • Title

    Gas phase doping at room temperature

  • Author

    Sasaki, Y. ; Mizuno, B. ; Akama, S. ; Higaki, R. ; Tsutsui, K. ; Ohomi, S. ; Iwai, H.

  • Author_Institution
    Ultimate Junction Technol. Inc.,, Moriguchi, Japan
  • fYear
    2002
  • fDate
    2-3 Dec. 2002
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.
  • Keywords
    boron; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor doping; semiconductor junctions; silicon; 1.5 to 2 nm; 293 to 298 K; Si:B; gas phase doping; room temperature thermal potential; shallow junction formation; Argon; Boron; Doping; Electromagnetic measurements; Electromagnets; Gas lasers; Plasma density; Plasma measurements; Plasma sources; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-028-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2002.1225196
  • Filename
    1225196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951229