Title :
Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS
Author :
Yoshikawa, S. ; Toujou, F. ; Homma, Y. ; Takenaka, H. ; Hayashi, S. ; Inoue, M. ; Goto, K. ; Shimizu, R.
Author_Institution :
Matsushita Technores. Inc., Moriguchi, Japan
Abstract :
We are developing multilayer reference materials for shallow depth profiling in secondary ion mass spectrometry (SIMS). In this report, the potential of boron-nitride (BN)/silicon (Si) multilayers as the reference materials for shallow depth profiling is shown from the standpoint of SIMS analyses.
Keywords :
boron compounds; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor superlattices; silicon; BN-Si; BN-delta doped multilayer reference materials; SIMS; secondary ion mass spectrometry; shallow depth profiling; Boron; Calibration; Electronic mail; Laboratories; Nonhomogeneous media; Performance analysis; Rough surfaces; Silicon; Sputtering; Surface roughness;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225199
