Title :
Vacuum-silicon solid microwave diodes and triodes based on P++ -N and on tungsten cathodes
Author :
Koshevaya, S.V. ; Kanevsky, V.I. ; Tecpoyoti-T., M. ; Gutiérrez-D, E.A. ; Buriak, G.N. ; Chayka, V.E.
Author_Institution :
Nat. Inst. of Astrophys. Opt. & Electron., Puebla, Mexico
Abstract :
This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication. Additionally, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes, shows that diodes with a back voltage P++-N cathode have a wide frequency band, but an efficiency smaller than that of tungsten diodes
Keywords :
cathodes; elemental semiconductors; microwave diodes; silicon; triodes; vacuum microelectronics; P++-N cathode; Si; amplifier; diode; generator; millimetre range; multiplier; submillimetre range; triode; tungsten cathode; vacuum-silicon solid microwave device; Anodes; Cathodes; Computer hacking; Frequency; Microwave devices; Semiconductor diodes; Silicon; Solids; Tungsten; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838755
