• DocumentCode
    1951337
  • Title

    Challenges in excimer laser lithography for 256M DRAM and beyond

  • Author

    Endo, M. ; Hashimoto, K. ; Yamashita, K. ; Katsuyama, A. ; Matsuo, T. ; Tani, Y. ; Sasago, M. ; Nomura, N.

  • Author_Institution
    Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    New chemically amplified positive resist and off-axis illumination technique of KrF excimer laser lithography has been developed and successfully applied to the fabrication of 0.25 mu m-rule 256M DRAM. For below 0.25 mu m pattern fabrication, ArF excimer laser lithography has been found to be very promising using newly developed chemically amplified ArF excimer laser positive resist and large field projection lens.<>
  • Keywords
    DRAM chips; VLSI; integrated circuit technology; laser beam applications; photolithography; 0.25 micron; 256 Mbit; DRAM; KrF; chemically amplified positive resist; excimer laser lithography; large field projection lens; off-axis illumination technique; pattern fabrication; DRAM chips; Integrated circuit fabrication; Laser applications; Photolithography; Very-large-scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307305
  • Filename
    307305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951337