Title :
A new model for thin oxide degradation from wafer charging in plasma etching
Author :
Sychyi Fang ; Murakawa, S. ; McVittie, J.P.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Plasma nonuniformity can lead to surface charging and damaging currents through thin oxides. In poly-Si etching, surface currents across the wafer prevent damage until just before endpoint when current collected in halo regions around the mask can lead to gate charging and excessive tunneling current through the oxide. During overetching, additional damage is minimal because of the small collection area. This model is supported by plasma measurements, SPICE simulations, and etching damage results.<>
Keywords :
dielectric thin films; elemental semiconductors; semiconductor process modelling; silicon; sputter etching; static electrification; tunnelling; Si; gate charging; halo regions; model; overetching; plasma etching; poly-Si etching; polysilicon etching; surface charging; thin oxide degradation; tunneling current; wafer charging; Dielectric films; Semiconductor process modeling; Silicon; Sputter etching; Surface charging; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307309
