SOI NMOSFETs with SiGe elevated S/D and Ni silicide

Author

Choi, Hoon ; Oh, Hyuckjae ; Shim, JeoungChill ; Sakaguchi, Takeshi ; Kurino, Hiroyuki ; Koyanagi, Mitsumasa

Author_Institution

Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

63

Lastpage

64

Abstract

SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7/spl Omega//square could be obtained.

Keywords

Ge-Si alloys; MOSFET; chemical vapour deposition; elemental semiconductors; nickel compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon-on-insulator; vapour phase epitaxial growth; Ni silicidation; NiSi; Si; SiGe; SiGe selective epitaxial growth; elevated drain structure; elevated source structure; high current drivability; high performance SOI NMOSFET; sheet resistance; CMOS technology; Germanium silicon alloys; MONOS devices; MOSFETs; Nickel; Rapid thermal annealing; Silicidation; Silicides; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225204

Filename

1225204