DocumentCode :
1951429
Title :
A sub-1 volt CMOS bandgap voltage reference based on body-driven technique
Author :
Aldokhaiel, Adil ; Yamazaki, Akiko ; Ismail, Mohammed
Author_Institution :
Buraydah Coll. of Technol., Saudi Arabia
fYear :
2004
fDate :
20-23 June 2004
Firstpage :
5
Lastpage :
8
Abstract :
A sub-1 volt bandgap voltage reference is presented. The bandgap design utilizes the body-driven technique, which allows the bandgap voltage reference to operate at low voltages without requiring low threshold voltage devices. The technique provides larger input common-mode range, which is important in low voltage bandgap voltage reference circuits. The design features PMOS diodes to provide the negative and positive temperature coefficients. The complete design was simulated and laid out in AMI 0.6 μm CMOS process. A minimum supply voltage of 0.8 V and a maximum current of 1.1 μA were achieved. The design provides a temperature coefficient of 33 ppm/°C over a temperature range from 0 to 100°C and occupies an area of 0.05 mm2.
Keywords :
CMOS integrated circuits; Zener diodes; avalanche diodes; energy gap; integrated circuit design; reference circuits; 0 to 100 degC; 0.6 micron; 0.8 V; 1 V; 1.1 muA; AMI CMOS process; CMOS bandgap voltage reference circuits; PMOS diodes; body driven technique; low voltage bandgap voltage reference circuits; negative temperature coefficient; positive temperature coefficient; Bandwidth; CMOS technology; Circuits; Diodes; Educational institutions; Low voltage; Operational amplifiers; Photonic band gap; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
Print_ISBN :
0-7803-8322-2
Type :
conf
DOI :
10.1109/NEWCAS.2004.1358998
Filename :
1358998
Link To Document :
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