Title :
Suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI
Author :
Mizushima, I. ; Sato, T. ; Miyano, K. ; Tsunashima, Y.
Author_Institution :
Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
The paper deals about suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI. The novel process sequence was proposed that satisfies both the suppression of the migration and the removal of native oxide by controlling the pressure and the temperature of hydrogen annealing. The proposed process was successfully applied for the formation of elevated source and drain structure fabricated on ultra-thin SOI wafer.
Keywords :
MOSFET; annealing; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon-on-insulator; MOSFET; Si; annealing; hydrogen annealing; migration suppression; pressure control; selective epitaxial growth; temperature control; ultrathin SOI; Annealing; Epitaxial growth; Hydrogen; MOSFET circuits; Monitoring; Pressure control; Rough surfaces; Semiconductor films; Silicon; Surface roughness;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225205
