Title :
Reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors under forward bias and temperature stress
Author :
Hafizi, M. ; Stanchina, W.E. ; Metzger, R.A. ; Jensen, J.F. ; Rensch, D.B. ; Delaney, M.J. ; Greiling, P.T. ; Williams, F.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
We report, for the first time, on the reliability of AlInAs/GaInAs heterojunction bipolar transistors. This is also the first report on the reliability of a high-performance millimeter-wave HBT. Devices with MBE grown base Be doping levels of 5-10*10/sup 19/ cm/sup -3/ and base thickness of approximately 50 nm displayed no sign of Be diffusion under applied bias (i.e. drift in V/sub BE/ or beta ). Excellent stability in DC current gain and base-emitter junction characteristics was observed. Degradation of the base-collector junction was used as failure criteria to project a MTTF of more than 10/sup 7/ hours at 125 degrees C with an activation energy of 1.92 eV.<>
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; molecular beam epitaxial growth; reliability; solid-state microwave devices; 1*10/sup 7/ hour; 1.92 eV; 125 C; AlInAs-GaInAs:Be; Be diffusion; Be doping levels; DC current gain; MBE grown base; MTTF; base thickness; base-collector junction degradation; base-emitter junction characteristics; failure criteria; forward bias; heterojunction bipolar transistors; millimeter-wave HBT; reliability; temperature stress; Aluminum compounds; Epitaxial growth; Failure analysis; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Leakage currents; Microwave devices; Reliability;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307311
