• DocumentCode
    1951451
  • Title

    Effect of Temperature-Dependent Bipolar Gain Distribution on Seu Vulnerability of Soi Cmos Srams

  • Author

    Alles, Michael L. ; Massengill, Lloyd W. ; Kerns, S.E.

  • Author_Institution
    Vanderbilt University, Nashville, TN
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    96
  • Lastpage
    97
  • Keywords
    Capacitance; Computer simulation; Conferences; Current measurement; Frequency; Gain measurement; Radiation hardening; Random access memory; Single event upset; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664812
  • Filename
    664812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951451